Effect of Different Gate Electrode Materials on the Radiation Hardness of NiO-based RRAM
碩士 === 國立暨南國際大學 === 電機工程學系 === 104 === The main theme of this paper is to fabricate resitive switching memory devices with P-type nickel oxide (NiO) thin film as the active dielectric layer. The pre- and post-irradiated resistive switching characteristics of the NiO-based resistive switching memory...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82790294379587845516 |