Effect of Different Gate Electrode Materials on the Radiation Hardness of NiO-based RRAM

• Main Authors: Chou,Ding-Hao, 周鼎浩
• Other Authors: Wu,You-Lin
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/82790294379587845516

碩士 === 國立暨南國際大學 === 電機工程學系 === 104 === The main theme of this paper is to fabricate resitive switching memory devices with P-type nickel oxide (NiO) thin film as the active dielectric layer. The pre- and post-irradiated resistive switching characteristics of the NiO-based resistive switching memory devices with different metal electrode materials were explored. NiO has been recognized as one of the dielectric materials suitable for the application of resistive switching memory device. In this work, we have tried at first to develop a complete and uniform solution allowed NiO thin film deposition by spin coating. We used SiO2/Si wafer as the substrate.After carefully cleaning the substrate, onto which a titanium (Ti) film was deposited as the bottom electrode by using electron E-gun evaporation, and then the NiO film was spin-coated followed by a thermal annealing process. Thermally evaporated Al, Au, and Ni films were respectively deposited onto the NiO layer as the top electrode to complete devices with structure of Al/NiO/Ti, Au/NiO/Ti, and Ni/NiO /Ti. Semiconductor parameter analyzer Agilent-4156B was then used to measured the I-V characteristic of the devices. The I-V measurements were carried out by applying forward and backward double sweep driving voltages Our experimental result shows that the NiO film does have resistive switching property. Strong degradation is noticed in those post-irradiated devices. Irrespective of what the top electrode used, the post-irradiated I-V characteristics of all the NiO-based devices became linear dependence, indicating that the devices turned into a resistor and has no radiation hardness at all. We are therefore expect that the NiO-based resistive switching memory devices are not suitable for outer space or nuclear plant application.