Effect of Different Gate Electrode Materials on the Radiation Hardness of NiO-based RRAM
碩士 === 國立暨南國際大學 === 電機工程學系 === 104 === The main theme of this paper is to fabricate resitive switching memory devices with P-type nickel oxide (NiO) thin film as the active dielectric layer. The pre- and post-irradiated resistive switching characteristics of the NiO-based resistive switching memory...
Main Authors: | Chou,Ding-Hao, 周鼎浩 |
---|---|
Other Authors: | Wu,You-Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/82790294379587845516 |
Similar Items
-
Investigate the Effect of Ti Incorporation on NiO RRAM
by: Chang, Wei-Chen, et al.
Published: (2010) -
Electrical properties of NiO bipolar Resistive Random Access Memory (RRAM)
by: Chan-Cheng Chen, et al.
Published: (2012) -
NiO nanosheet assembles for supercapacitor electrode materials
by: Huanhao Xiao, et al.
Published: (2016-06-01) -
The Impact of Ultraviolet Light on the Switching Characteristics of NiO and ZnO Resistive Random Access Memory (RRAM) Devices
by: Ming-ChengHuang, et al.
Published: (2018) -
Ni(OH)2 and NiO Based Composites: Battery Type Electrode Materials for Hybrid Supercapacitor Devices
by: Anne-Lise Brisse, et al.
Published: (2018-07-01)