Germanium-based Junctionless Transistor with Utral Shallow Junction Formation
碩士 === 國立暨南國際大學 === 電機工程學系 === 105 === When the depth of the channel length is scales down, will lead to cut-in current add at junction depletion region. As a result, the threshold voltage is reduced. The best approach to avoid this phenomenon is ultra-shallow junction. Process by microwave annealin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3pf3g6 |