Evaluation of Enhancement Mode InAs HEMTs for RF and Low-Power Logic Applications Using Non-alloyed Ohmic &; Sidewall Etch Process
碩士 === 國立交通大學 === 光電系統研究所 === 104 === In order to extend Moore’s law. The key point lies in maximizing the device on-current, while suppressing the leakage currents. In general, III-V compound semiconductors have significantly higher intrinsic mobility than silicon and the substrates are semi-insula...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ns7b82 |