The Study of La2O3/SiO2 GaN MIS-HEMT for High Power Application
碩士 === 國立交通大學 === 光電系統研究所 === 104 === GaN has high mobility, high breakdown and low on-resistance, comparing with other electron device. It is more suitable for high power application. However their performance and reliability are limited by the gate leakage current and drain current degradation. Th...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/qkecpv |