The Study of La2O3/SiO2 GaN MIS-HEMT for High Power Application
碩士 === 國立交通大學 === 光電系統研究所 === 104 === GaN has high mobility, high breakdown and low on-resistance, comparing with other electron device. It is more suitable for high power application. However their performance and reliability are limited by the gate leakage current and drain current degradation. Th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qkecpv |