Investigation of Electrical Characteristics on 100-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric
碩士 === 國立交通大學 === 光電系統研究所 === 104 === A bulk InGaAs-based FinFET device compatible with Si-technology has been developed in this thesis. Here also applied several key techniques, including fabrication of Al2O3/InxGa1-xAs MOS, gold-free S/D contact, nano-scaled channel of InxGa1-xAs with 3D FinFET s...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/kcu364 |