The research and process development of III-V on Si high speed electronic devices
碩士 === 國立交通大學 === 光電工程研究所 === 104 === In this thesis, we report two compound semiconductor devices: GaN-on-Si high electron mobility transistor (HEMT) and In0.53Ga0.47As-on-Si Fin field effect transistor (FinFET). We have demonstrated the high power GaN HEMT with metal-insulator-semiconductor (MIS)...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74925544897278834537 |