Investigations of Aluminum oxide/Germanium Metal-Oxide-Semiconductor Devices Deposited by Atomic Layer Deposition at Different Temperatures
碩士 === 國立交通大學 === 照明與能源光電研究所 === 104 === In this thesis, the 7 nm of Aluminum oxide Al2O3 was deposited on n-type Germanium wafer at 150℃, 200℃, and 250℃. Then 80 nm of Ni was deposited on Al2O3 as top electrode and 150 nm of Au-Sb is deposited on backside of Germanium wafer by thermal evaporator. F...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3ye53j |