Investigations of Aluminum oxide/Germanium Metal-Oxide-Semiconductor Devices Deposited by Atomic Layer Deposition at Different Temperatures

• Main Authors: Lin,Li-Chien, 林立騫
• Other Authors: Yang, Zu-Po
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/3ye53j

碩士 === 國立交通大學 === 照明與能源光電研究所 === 104 === In this thesis, the 7 nm of Aluminum oxide Al2O3 was deposited on n-type Germanium wafer at 150℃, 200℃, and 250℃. Then 80 nm of Ni was deposited on Al2O3 as top electrode and 150 nm of Au-Sb is deposited on backside of Germanium wafer by thermal evaporator. Form a Metal-Oxide-Semiconductor device with structure of Ni/Al2O3/n-Germanium/AuSb. The as-deposited samples at different temperatures are noted as Td150, Td200, and Td250.The samples with post-deposition annealing treatment are noted as PDA-Td150, PDA-Td200, and PDA-Td250. In electronic analysis, the high frequency C-V and I-V curves is used to extract capacitance equivalent thickness (CET or EOT), effective k-value (keff), density of interface trap (Dit), density of leakage current (Jg). In material analysis, X-ray diffraction (XRD) is used to verify the crystalline of Al¬¬-2O3 thin film, Fourier transform infra-red spectrometry (FTIR) is used to investigate the chemical bond profile of samples, X-ray Photoemission Spectrometry Results (XPS) is used to investigate the chemical state of Ge 3d, Al 2p, and O 1s in Al2O3 ¬thin film with respect of depth. KEYWARDS: Atomic Layer Deposition (ALD), Aluminum oxide (Al2O3), Germanium, MOS devise