On The Performances of In0.53Ga0.47As nMOSFETs Using Post Remote-Plasma Treatment And PEALD-AlN Passivation Layer
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Advanced future CMOS technology will rely on the innovation of materials, architecture, and transport theory. As conventional silicon complementary metal oxide semiconductor (CMOS) scaling approaches end of the roadmap, III-V compound semiconductors have be...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9c3x34 |