The Study of in-situ Hydrogen deposited a-IGZO active layer TFTs by Atmospheric Pressure-PECVD
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Recently, compared with the conventional a-Si TFTs, amorphous In-Ga-Zn-O (IGZO) thin film transistors have attracted attention that due to its better field-effect mobility (>10 cm2/V．S), larger Ion/Ioff ratio (>106), smaller subthreshold swing (SS...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55485841485252608498 |