| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Non-volatile memory (NVM) plays a important role in modern science, and it is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory. However, with the scaling down of semiconductor device, tunneling oxide thickness is also reduced, which leads to a severe leakage of storage charge and unable to satisfy the memory requirement. Recently, Resistive random access memory (RRAM) is considered to be the most promising one to become the next-generation NVM device since its simple structure, fast program/erase speed, and low power consumption.
Owing to its metal/oxide/metal structure in this thesis, our RRAM was fabricated by common metal - Aluminum, as its top and bottom electrode. And we used amorphous oxide semiconductor - indium gallium zinc oxide (IGZO) to be the oxide layer due to its high mobility, low temperature deposition, and uniformity. And the memory capability and characteristics are also investigated here. In this experiment, the IGZO layer was deposited by using APPECVD technique which can reduce the cost of the process. However, there are some inherent defect in amorphous IGZO film thereby affect the device, we expect that the performance and reliability can be improved by using microwave annealing (MWA) treatment.
From the experiment results, we find that our device exhibits the nonpolar mode and has better performance under bipolar operation. Besides, the reliability is therefore enhanced in suitable microwave power and annealing time conditions.
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