Traps Induced Reliability Issues in Resistive Random Access Memory and SONOS Flash Memory
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === This dissertation will focus on major reliability issues in random access memory (RRAM) and SONOS flash memory induced by traps in a dielectric. Statistical characterization of SET-disturb failure time in an RRAM crossbar array, random telegraph noise (RTN)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00401619937660067709 |