Investigate the characteristic of HfZrO and HfAlO ferroelectric memory capacitor under the different temperture condition
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Decades, ferroelectric materials have been widely used in daily life. About all applications, ferroelectric random access memory (FeRAM) occupies most of ferroelectric materials, so it becomes one of the new-technological nonvolatile memory. Moreover ferroe...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/599cw2 |