Characteristic investigation of p-type SnO and n-type SnO2 thin film transistors with different annealing conditions
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === With the rapid development of active-matrix flat panel displays (AMFPDs), thin film transistor (TFT) technologies have been widely used for display application, gradually, the traditional amorphous-Si TFTs cannot meet the requirement nowadays. In recent yea...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29941849312317149523 |