Characterization of N-type Gate-All-Around Poly-Silicon Nanowire Transistors Fabricated by Nitride-Spacer Hardmask Methods
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In this thesis, short-channel gate-all-around (GAA) poly-Si inversion mode (IM), accumulation mode (AcM), and junctionless (JL) NW transistors were successfully fabricated with I-Line-based lithography. In combination of source/drain-spacers and nitride-spa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gs8ryb |