The Study of GaN Thick Film Grown on Sapphire Substrate with PVD AlN Buffer Layer by HVPE
碩士 === 國立交通大學 === 電子物理系所 === 104 === In this paper, the fabrication of GaN thick film grown by HVPE with physical vapor deposition (PVD) formed aluminum nitride (AlN) buffer layer is presented. The thickness of PVD-AlN layer was 25~40 nm. The GaN thick films were grown by three-steps method using HV...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05479728275633300637 |