Improvements of the optoelectronic and structural properties of InGaN-based light-emitting diodes by employing nanostructures
博士 === 國立交通大學 === 電子物理系所 === 104 === In this thesis, InGaN-based light-emitting diodes (LED) are grown on the nanoscale-patterned sapphire substrates (NPSSs) prepared with the anodic aluminum oxide (AAO) technique as the dry etching mask. The cross-sectional view of SEM image shows that voids exist...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qwwh4y |