Practical Topology Application of Cascode GaN HEMTs in Power Electronics
碩士 === 國立交通大學 === 機械工程系所 === 104 === Normally-off GaN-based high-electron-mobility transistor (HEMT) have been developed with fast switching and low conduction losses. This study dedicated in applying normally-off GaN in conventional power electronic circuit topologies including high efficiency BLDC...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79710017377930739090 |