Study of Anode edge termination for AlGaN/GaN Schottky diode by Silvaco simulation

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 104 === Simulation study of anode edge termination on high performance AlGaN/GaN Schottky diodes was performed in this work. The DC performance of devices containing three different anode types, e.g., recess, field-plate and guard-ring, under forward and reverse...

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Bibliographic Details
Main Authors: Chou, Kuan-Yu, 周冠佑
Other Authors: Chang, Yi
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/64632840393654077574