Study of Anode edge termination for AlGaN/GaN Schottky diode by Silvaco simulation
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 104 === Simulation study of anode edge termination on high performance AlGaN/GaN Schottky diodes was performed in this work. The DC performance of devices containing three different anode types, e.g., recess, field-plate and guard-ring, under forward and reverse...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/64632840393654077574 |