Growth, Fabrication and Characterization of AlGaN/GaN Schottky Diodes and AlInN/GaN Field-Effect Transistors
博士 === 國立中央大學 === 電機工程學系 === 104 === In this dissertation, the growth mechanisms and device characteristics of AlGaN/GaN-based Schottky barrier diodes (SBDs) with a high breakdown voltage and the AlInN-based high electron mobility transistors (HEMTs) with a high current density have been studied....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43165176168569087482 |