DC and Transient Performance of AlGaN/GaN HEMTs with Different Buffer Layers
碩士 === 國立中央大學 === 電機工程學系 === 104 === This study investigates the DC and transient performance of AlGaN/GaN high electron mobility transistors with different buffer layers, which were deposited on the low-resistivity Si (111) substrate. Based on the distinct buffer layers and i-GaN layer, we invest...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62167164369647284129 |