Strain-Controlled Germanium Thin Films Grown by Electron Cyclotron Resonance-Chemical Vapor Deposition
碩士 === 國立中央大學 === 光電科學與工程學系 === 104 === We use Electron Cyclotron Resonance-Chemical Vapor Deposition (ECR-CVD) to grow compressive and tensile strained Germanium (Ge) thin films on Silicon (Si) substrate under the low temperature of 220℃ in this research. The fabrication of device on Complementary...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4d66tk |