Investigation of Gallium Arsenide Thin Films deposited by RF Sputtering
碩士 === 國立中央大學 === 光電科學與工程學系 === 104 === In this study the Gallium Arsenide thin films deposited on the Germanium wafer by using sputtering method was discussed. The advantage of sputtering method was its lower costs and nontoxic process. Firstly, the properties of the Gallium Arsenide films were an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48n87a |