Design of Adiabatic SRAM and CAM Using FinFET Devices
碩士 === 國立彰化師範大學 === 電子工程學系 === 104 === The planar MOSFET suffer from the increased subthershold and gate leakage currents. FinFET is considered as one of the best substitutes for planar MOSFET technology in the sub-20 nm regime. This thesis presents the design of Adiabatic SRAM and CAM Using FinFET...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91808903217809180314 |