| Summary: | 碩士 === 國立彰化師範大學 === 電子工程學系 === 104 === In order to obtain a large area MoS2 thin film, herein we utilized sulfurization progress of e-gun evaporated Mo film on Si substrates. We sulfured Mo films in a quartz tube of a horizontal furnace utilizing rich sulfur to fabricate MoS2 thin film.
Based on the X-ray diffraction, Raman spectroscopy, atomic force microscopy, scanning electron microscope, energy dispersive spectrometer, reflection and photoconductivity measurements, the sulfurization method we proposed here is useful to obtain MoS2 layered crystals.
However, the information about metal contacts for MoS2 should be also investigated in detailed for device applications. Herein, Al , Ag and Au metals deposited on two-dimensional MoS2 thin films by evaporation technique. Current–voltage characteristic, TLM, Hall and
Photodetector measurement result all show that Al results in the highest bias current indicating its superior charge injection capabilities for an interface with MoS2. It is observed that lower work function of the metal contacts lead to smaller Schottky barrier heights (ΦB) and higher charge carrier injection through the contacts. Therefore, Al is more suitable than Ag and Au for the metal contacts of the MoS2 thin film based devices
Keywords：MoS2, Thermal evaporating, Metal contact, Photodetector
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