Pinning effect of domain wall on permalloy nanowires with stopper/notch
碩士 === 國立彰化師範大學 === 光電科技研究所 === 104 === Now the next step is considered to take over by STT-MRAM, we can promote the speed and density widely in the racetrack frame of memory, and use Domain Wall to memory data efficiently. However, we have difficulty in locating because the Domain Wall move quickly...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56154392645225480633 |