利用脈衝雷射蒸鍍製備二氧化鈦薄膜之電阻轉換特性研究
碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 104 === Recently, the resistive switching behavior in TiO2 has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO2 shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/83496048287862071438 |