利用脈衝雷射蒸鍍製備二氧化鈦薄膜之電阻轉換特性研究

• Main Authors: Li-Syuan Fu, 傅荔暄
• Other Authors: Chang-Feng Yu
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/83496048287862071438

碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 104 === Recently, the resistive switching behavior in TiO2 has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO2 shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance state (LRS). Therefore, this study is focused on TiO2 material for RRAM application. In this study, we investigate the resistive switching characteristics of different deposition conditions TiO2 film deposited by pulsed laser deposition (PLD) on ITO glass. Platinum (Pt) top electrode was deposited on TiO2 film/ ITO glass. Firstly, this study was investigated the resistive switching characteristics TiO2 film and with N dopant (TiO2:N). Additionally, the relationship between the thickness of thin film, growth temperature (room temperature 25℃ to 300℃) and the electrical properties of TiO2 RRAM was discussed in this study. 　　For the physical characteristics, the crystallization and structure of the TiO2 film were obtain by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman. It shows that the structure of TiO2 film is Rutile. The electrical and reliability characteristics of Pt/ TiO2/ITO (MIM) structure RRAM devices were measured by the semiconductor parameter analyzer (Agilent 4155C). The symmetric stack structure of TiO2 RRAM device exhibits a symmetrical behavior by the I-V measurement sweeping mode. It is demonstrated that all the deposition condition is an excellent candidate for RRAM application. Moreover, the reliability of the memory effects is evaluated by performing a switching cycling test. It is show that the retention of HRS and LRS can be hold over 104 seconds for TiO2 and TiO2:N devices. Furthermore, the TiO2:N device at room temperature displayed a HRS/LRS resistance ratio of > 104. The experimental results show that the N-doped TiO2 films have a high potential for resistive memory applications.