Study the Reliability for Hot-Carrier Stress Induced Degradation on N-Channel FinFET Devices
碩士 === 國立高雄師範大學 === 電子工程學系 === 104 === In this work, hot carrier effect (HCE) was used to study the reliability of n-channel FinFET devices. We compared the effect of reliability with different fin numbers. Power law analysis was used to distinguish the bulk trap from Positive Bias Temperature Insta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79767558545779565436 |