The Stacking of CMOS Photovoltaic Devices by Localized Substrate Removal for High Voltage Generation
碩士 === 國立中山大學 === 光電工程學系研究所 === 104 === The open-circuit voltage of a silicon-based photovoltaic device (PV) is typically 0.5V, which is not high enough to drive transistors fabricated by standard bulk complementary metal-oxide-semiconductor (CMOS) process. In this dissertation, we succeed in boosti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16202487989491499471 |