Growth of Gallium Oxide on（100）γ-LiAlO2 Substrate by Chemical Vapor Deposition
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 104 === In this study, gallium oxide (Ga2O3) was grown on LiAlO2 (LAO) substrate by chemical vapor deposition (CVD). Argon and oxygen are used as carrier gas and reaction gas, respectively. Pure gallium metal is used as reaction source. The growth pressure is contr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/eq3jem |