The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 104 === In this thesis, we studied the growth of high quality M-plane GaN thin film on LiGaO₂ (100) substrate by Plasma-Assisted Molecular Beam Epitaxy. The scanning results of atomic force microscope (AFM) showed that the surface morphology of the substrate with acid t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95188636330418741697 |