The Effect of Laser Annealing on Amorphous Silicon with Different Pixel Pitch Structure for Far-Infrared Ray Bolometer Device
碩士 === 國立中山大學 === 電機工程學系研究所 === 104 === In this study, we focus on the effect of different pixel pitch structure of amorphous silicon with laser annealing for far-infrared ray bolometer. The sensing layer of the devices is amorphous silicon, which has low production cost and simple fabrication proce...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91604621535092764979 |