The Effect of Laser Annealing on Amorphous Silicon with Different Pixel Pitch Structure for Far-Infrared Ray Bolometer Device

• Main Authors: Ming-feng Chung, 鍾名豐
• Other Authors: Feng-Renn Juang
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/91604621535092764979

碩士 === 國立中山大學 === 電機工程學系研究所 === 104 === In this study, we focus on the effect of different pixel pitch structure of amorphous silicon with laser annealing for far-infrared ray bolometer. The sensing layer of the devices is amorphous silicon, which has low production cost and simple fabrication process. The suspension structure is designed for forming resonance cavity with better insulation property and more radiation absorption thus superior device performance. Two following processes are implemented for reducing the resistance of amorphous silicon: (1) Titanium nitride (TiN)contacts with the amorphous silicon sensing layer. TiN can help not only lowering the resistance but also assisting absorption. (2) Laser annealing can rearrange the lattice structure and leads to a smaller resistance. We also design different masks with two types of leg pattern and several pixel pitches. We measure the devices’ characteristics and analyze their temperature coefficient of resistance (TCR) in detail. Experimental results show that TCR in different pixel pitches of normal lag pattern all have good and comparable performances. While TCR of another double leg pattern demonstrates rising trend with increasing pixel pitch. Finally, all the devices are tested with light source. The resistances of the devices decline continually under illumination. When the light moves out, they go back to the initial value.