Graded Ge1-xSnx Photodetectors Fabricated on Si Substrates by Rapid Melt Growth Method
碩士 === 國立清華大學 === 光電工程研究所 === 104 === Germanium-Tin (GeSn) semiconductor alloy has been considered as a candidate for implementing active Group IV optoelectronics. In this thesis, a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector fabricated on Si substrate by rapid melt growth method with gra...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51915136403158257287 |