Photoluminescence Study of GeSn fabricated on Si substrate by Rapid Melt Growth Method
碩士 === 國立清華大學 === 光電工程研究所 === 104 === The material properties of GeSn structures fabricated on Silicon substrate by Rapid-Melt-Growth (RMG) method was investigated. We fabricated several GeSn strips, and because of the lower melting point of Sn, it would be pushed to the end of the strip and then so...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25437379195513313761 |