Growth Mode and Atomic Structure of the InSb Bilayer on the Ge(111) Surface
碩士 === 國立清華大學 === 物理系 === 104 === The Ⅲ-Ⅴ compound semiconductors have attracted much attention as material for high speed and low power device applications. InSb is one of the best Ⅲ-Ⅴ compound semiconductor with high electron mobility, small band gap, and high electron saturation velocity. Ge ha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05076989030999650525 |