Development of 4H-SiC JBS power device

碩士 === 國立清華大學 === 電子工程研究所 === 104 === In the thesis, we investigated in the design and fabrication issues of 1200V, 2 Amp junction barrier Schottky diodes. 2-D simulation shows that varying p+ grid spacing between 2-4 μm results in optimal trade-off between the forward and reverse characteristics. W...

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Bibliographic Details
Main Authors: Yang, Po Hsiang, 楊博翔
Other Authors: Huang, Chih Fang
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/21057387022390786308