Development of 4H-SiC JBS power device
碩士 === 國立清華大學 === 電子工程研究所 === 104 === In the thesis, we investigated in the design and fabrication issues of 1200V, 2 Amp junction barrier Schottky diodes. 2-D simulation shows that varying p+ grid spacing between 2-4 μm results in optimal trade-off between the forward and reverse characteristics. W...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21057387022390786308 |