Development of 4H-SiC JBS power device
碩士 === 國立清華大學 === 電子工程研究所 === 104 === In the thesis, we investigated in the design and fabrication issues of 1200V, 2 Amp junction barrier Schottky diodes. 2-D simulation shows that varying p+ grid spacing between 2-4 μm results in optimal trade-off between the forward and reverse characteristics. W...
Main Authors: | Yang, Po Hsiang, 楊博翔 |
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Other Authors: | Huang, Chih Fang |
Format: | Others |
Language: | zh-TW |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/21057387022390786308 |
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