Reduction of Current Leakage Paths in GaN Devices through Growth Optimization of Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立清華大學 === 電子工程研究所 === 104 === Leakage currents, which could degrade electrical properties of GaN devices, are an important issue related to epitaxial layer growth and device processing. In this thesis, according to the conduction path directions, the origins and solutions of lateral and vert...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/58982341209581188071 |