Schottky Barrier Diodes with In-Situ Grown Single Crystal Aluminum on GaN by Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立清華大學 === 電子工程研究所 === 104 === In this work, GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barrier grown by plasma-assisted molecular beam epitaxy are successfully fabricated. The lattice registration of single crystal (111) Al on (0001) GaN is investigated using both in-sit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76106865347274095570 |