Fabrication of High Power Schottky Barrier Diode with Field Plate Design
碩士 === 國立清華大學 === 電子工程研究所 === 104 === Gallium nitride is a wide bandgap material which have high critical electric field characteristics could withstand higher bias. In addition, two-dimensional electron gas with high transmission speed characteristics can be applied on high-speed device. Theref...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97131138596251460131 |