Improved Electrical Characteristics of Ge MOSFETs with Hf film Buffer Layer and ZrHfO stacks
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === Ge possesses two times electron mobility and .four times hole mobility compared to Si. Using Ge substrate and high-k material to obtain ultra-thin EOT, to achieve high mobility and drain current. However, using Ge material will face many challenges. It is easy...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/u5y473 |