Process Study of High-k Gate Dielectric and Interface Engineering for MOSFETs with SiGe/ Ge Channel
博士 === 國立清華大學 === 工程與系統科學系 === 104 === SiGe virtual substrate and high-k dielectrics were introduced into Metal Oxide Field Effect Transistor (MOSFET) devices to improve the electrical characteristics. For ultrathin equivalent oxide thickness (EOT), a higher-k dielectric was proposed to solve the le...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80131452696240960898 |