Plasma Treatments on Electrical Properties in SOI FinFETs with Ge Buried Channel
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === The on current of MOSFETs can be improved by Ge channel, because its carrier mobility is higher than Si. Thus, an epitaxy Ge buried channel is applied in this thesis. The epitaxy layer is successfully grown by the ultrahigh vacuum chemical molecular epitaxy (UH...
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| Format: | Others |
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2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39269857741268572237 |