Effects of Si/Ge Super-Lattice Channel on Electrical Properties of SOI FinFETs
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === A lattice mismatch exists between silicon and germanium material ,which induces a strain in Si/Ge channel FinFET. If a Ge epitaxy layer is under its critical thickness, a strain would be generated to promote carrier mobility. Epitaxy Si/Ge super-lattice is appl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26334460370700672629 |