Graphene assisted epitaxial aluminum nitride films by reactive sputtering process
碩士 === 國立臺南大學 === 機電系統工程研究所 === 104 === We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD, and then transferred onto silicon substrates. Epitaxial aluminum nitride films deposited by reactivity magnetron sputtering both on Graphene as a intermed...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62412887211031299936 |