Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Ferroelectric Hafnium–based oxides has attracted lots of attention due to the process compatible with currently CMOS process. The physical thickness of the Hafnium–based oxides can be thin down to nanometer scale with the ALD (Atomic Layer Deposition) technolo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54760527094901135649 |